Method for fabricating a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsSang Don Lee, Sung Woong Chung
Life of this patent
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Abstract
The semiconductor device includes an active region, a recess, a Fin-type channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island-type recess gate mask as an etching mask. The Fin-type channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin-type channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin-type channel region and the recess.
Claims15
A method for fabricating a semiconductor device comprising:
- (a) forming a device isolation structure in a semiconductor substrate to define an active region having a pad insulating film;
- (b) etching the pad insulating film to expose the semiconductor substrate;
- (c) etching a predetermined thickness of the exposed semiconductor substrate using an island shaped recess gate mask to form a first recess and a second recess, wherein a Fin channel region is formed at a lower part of the second recess, the etching of the predetermined thickness comprising:
- (c-1) forming a first insulating film over the exposed semiconductor substrate and a first hard mask layer over the first insulating film and the device isolation structure;
- (c-2) etching a predetermined region of the first hard mask layer, the first insulating film, the semiconductor substrate and the device isolation structure using the island shaped recess gate mask to form the first recess defining a recess channel region;
- (c-3) removing the first hard mask layer;
- (c-4) forming a spacer on a sidewall of the first recess;
- (c-5) isotropically etching the semiconductor substrate exposed at the lower part of the first recess to form the second recess;
- (c-6) isotropically etching the device isolation structure exposed at the lower part of the second recess in a longitudinal direction of the gate region to form a Fin channel region;
- and
- (c-7) removing the spacer and the first insulating film to expose the semiconductor substrate;
- (d) forming a gate insulating film over the active region including the Fin channel region, the first recess, and the second recess;
- (e) forming a gate conductive layer filling up the Fin channel region, the first recess, and the second recess;
- (f) forming a gate hard mask layer over the gate conductive layer;
- and
- (g) patterning the gate hard mask layer and the gate conductive layer using a gate mask as an etching mask to form a gate structure.
Dependencies are inferred from the claim text.