Semiconductor device, and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Hideaki Kuwabara, Saishi Fujikawa
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Abstract
In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
Claims26
A method of manufacturing a semiconductor device comprising:
- forming at least first and second semiconductor layers over a substrate;
- forming a first insulating film over the first and second semiconductor layers;
- forming at least first and second gate electrodes, at least one source line for a pixel portion, and an electrode of a terminal portion over the first insulating film;
- introducing an N-type impurity to at least the first semiconductor layer with the first gate electrode as a mask to form a first N-type impurity region;
- providing a tapered portion to the first and second gate electrodes by etching;
- introducing an N-type impurity to at least the first semiconductor layer through the tapered portion of the first gate electrode to form a second N-type impurity region;
- plating the source line of the pixel portion and the electrode of the terminal portion with a material including Cu;
- forming a second insulating film covering the source line of the pixel portion and the terminal portion;
- and
- forming a gate line of the pixel portion and a source line of a driver circuit on the second insulating film.
A method of manufacturing a semiconductor device comprising:
- forming at least a semiconductor layer over a substrate;
- forming a first insulating film over the semiconductor layer;
- forming at least a gate electrode, at least one source line of a pixel portion, and an electrode of a terminal portion over the first insulating film;
- introducing an N-type impurity into the semiconductor layer with the gate electrode as a mask to form a first N-type impurity region;
- providing a tapered portion to the gate electrode;
- introducing an N-type impurity into the semiconductor layer through the tapered portion of the gate electrode to form a second N-type impurity region;
- forming a second insulating film on the at least one source line of the pixel portion and the terminal portion;
- and
- forming a gate line of the pixel portion and a source line of a driver circuit on the second insulating film,
- wherein the at least one source line of the pixel portion includes Cu, and
- wherein the at least one source line of the pixel portion is formed by a printing method.
A method of manufacturing a semiconductor device comprising:
- forming at least a semiconductor layer over a substrate;
- forming an insulating film over the semiconductor layer;
- forming at least a gate electrode, at least one source line and an electrode of a terminal portion over the insulating film;
- introducing an impurity into the semiconductor layer with the gate electrode as a mask to form a first impurity region;
- providing a tapered portion to the gate electrode;
- and
- introducing an impurity into the semiconductor layer through the tapered portion of the gate electrode to form a second impurity region,
- wherein the at least one source line includes Cu, and
- wherein the at least one source line is formed by a printing method.
A method of manufacturing a semiconductor device comprising:
- forming at least a semiconductor layer over a substrate;
- forming an insulating film over the semiconductor layer;
- forming at least a gate electrode, at least one source line, and an electrode of a terminal portion over the insulating film;
- introducing an impurity into the semiconductor layer with the gate electrode as a mask to form a first impurity region;
- providing a tapered portion to the gate electrode;
- and
- introducing an impurity into the semiconductor layer through the tapered portion of the gate electrode to form a second impurity region,
- wherein the at least one source line comprises a first layer and a second layer on the first layer, the first layer including at least one of Ta, W, Ti, Mo, Al, Cu, Cr, and Nd and the second layer including Cu, and
- wherein the at least one source line is formed by a printing method.
A method of manufacturing a semiconductor device comprising:
- forming a gate line over a substrate;
- forming an insulating film over the gate line;
- forming a source line and an electrode of a terminal portion over the insulating film wherein the source line extends across the gate line and is electrically connected to one of a source and a drain of a thin film transistor;
- and
- plating the source line with a material including Cu,
- wherein the source line is formed by a printing method.
Dependencies are inferred from the claim text.