Semiconductor device and manufacturing method thereof
AssigneeCasio Computer Co., Ltd.
InventorsTakeshi Wakabayashi, Ichiro Mihara
Life of this patent
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Abstract
A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor.
Claims16
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of openings penetrating in a thickness direction in a base plate forming sheet made of material including a thermosetting resin in a semi-cured state;
- filling a vertical conductor forming paste including a conductive paste into each of the openings of the base plate forming sheet;
- arranging a plurality of semiconductor constructs each having a semiconductor substrate and a plurality of external connection electrodes provided on one surface of the semiconductor substrate in such a manner as to leave space between them on the vertical conductor forming paste and the base plate forming sheet;
- curing the thermosetting resin in the base plate forming sheet to form a base plate, curing the vertical conductor forming paste to form a plurality of vertical conductors, and securing the semiconductor constructs onto the base plate in a state where the external connection electrodes are respectively connected to the vertical conductors;
- forming an insulating layer on the base plate around the semiconductor constructs;
- and
- cutting the insulating layer and the base plate between the semiconductor constructs, thus obtaining a plurality of semiconductor devices each including at least one semiconductor construct.
A method of manufacturing a semiconductor device, comprising:
- providing a base plate having a first vertical conductor and a second vertical conductor which have a predetermined thickness and penetrate in a direction of the thickness of the base plate;
- providing a plurality of semiconductor constructs each having a columnar electrodes connected to connection pads on a semiconductor substrate;
- thermally press-bonding the columnar electrodes to the first vertical conductors;
- covering a periphery of each of the semiconductor constructs with an insulating layer;
- forming a conductive member connected to the second vertical conductor;
- and
- cutting the insulating layer and the base plate between the semiconductor constructs, and thus obtaining a plurality of semiconductor devices each including at least one semiconductor construct.
Dependencies are inferred from the claim text.