Method of forming a chalcogenide material containing device
AssigneeMicron Technology, Inc.
InventorJoseph F. Brooks
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Abstract
Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing layer. A protective layer is formed over the stack. The protective layer blocks light, is conductive, and is etch able with the other layers of the stack. Further, the metal of the metal containing layer is substantially insoluble in the protective layer. The stack and the protective layer are then patterned and etched to form memory elements.
Claims23
A method of forming a chalcogenide material containing device, the method comprising the acts of:
- forming a stack of one or more layers over a substrate, the stack including at least one layer of chalcogenide material;
- forming a tungsten comprising layer over the stack;
- and
- subsequently etching each layer of the stack and the tungsten comprising layer during a same etching step.
A method of fabricating resistance variable memory elements, the method comprising:
- forming a first electrode over a substrate;
- forming a stack of one or more layers over the first electrode, the stack comprising at least one layer of chalcogenide glass;
- forming a protective layer over the stack;
- and
- subsequently etching the stack and the protective layer during a same etching step;
- and
- forming a second electrode over the stack and protective layer.
Dependencies are inferred from the claim text.