Back to results
US 7,459,321 B2Granted
Method of storing a data bit in a fast-write alloy
AssigneeIntel Corporation
InventorsEric C. Hannah, Michael A. Brown
Life of this patent
Estimating the term…
Abstract
Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.
Claims3
A method of storing a data bit comprising:
- exposing a volume of fast-write alloy to an electron beam to heat the volume of fast-write alloy to a temperature equivalent to about 85% of the melting temperature for the fast-write alloy;
- cooling the volume of fast-write alloy along a cooling profile associated with a crystalline phase and a stored data bit memory state wherein cooling the volume of fast-write alloy along a cooling profile comprises further exposing the volume of fast-write alloy to the electron beam to reduce the rate of cooling of the volume of fast-write alloy.
Dependencies are inferred from the claim text.