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US 7,459,246 B2Granted
Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Takeshi Shibata, Kazuyoshi Sugihara, Kouji Matsuo
Life of this patent
Estimating the term…
Abstract
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
Claims8
A stencil mask comprising:
- a silicon semiconductor thin film in which a plurality of openings are formed;
- and
- a plurality of covering layers formed on a surface of the silicon semiconductor thin film and an inner surface of the openings,
- wherein the plurality of covering layers include an insulating film containing a silicon, and the insulating film is harder than the silicon semiconductor thin film.
1 more element
A stencil mask for use in an ion implantation process, comprising:
- a silicon semiconductor thin film in which a plurality of openings are formed;
- and
- an insulating film formed on a surface of the silicon semiconductor thin film and an inner surface of the openings,
- wherein the insulating layer contains silicon and is harder than the silicon semiconductor thin film.
1 more element
Dependencies are inferred from the claim text.