Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate

In a plasma processing system, a method for optimizing etching of a substrate comprising:

• selecting a first set of plasma process recipes including a first process variable with all plasma process characteristics of said first plasma recipe other than said first process variable held constant, wherein changing said first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic;
• selecting a second set of plasma process recipes including a second process variable with all plasma process characteristics of said second plasma recipe other than said second process variable held constant, wherein changing said second process variable by a second amount aggravates said first substrate etch characteristic and optimizes said second substrate etch characteristic;
• positioning a substrate on a chuck in a plasma processing chamber;
• striking a plasma within said plasma processing chamber;
• alternating between a plasma recipe of said first set of plasma recipes and a plasma recipe from said second set of plasma recipes, wherein upon completion of said alternating, said first substrate etch characteristic and said second substrate etch characteristic are substantially optimized.

In a plasma processing system, an apparatus for optimizing etching of a substrate comprising:

• means for selecting a first set of plasma process recipes including a first process variable with all plasma process characteristics of said first plasma recipe other than said first process variable held constant, wherein changing said first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic;
• means for selecting a second set of plasma process recipes including a second process variable with all plasma process characteristics of said second plasma recipe other than said second process variable held constant, wherein changing said second process variable by a second amount aggravates said first substrate etch characteristic and optimizes said second substrate etch characteristic;
• means for positioning a substrate on a chuck in a plasma processing chamber;
• means for striking a plasma within said plasma processing chamber;
• means for alternating between a plasma recipe of said first set of plasma recipes and a plasma recipe from said second set of plasma recipes, wherein upon completion of said alternating, said first substrate etch characteristic and said second substrate etch characteristic are substantially optimized.