Method of forming an N-type doped single crystal diamond
AssigneeApollo Diamond, Inc.
InventorsRobert C. Linares, Patrick J. Doering
Life of this patent
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Abstract
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.
Claims23
A method of forming an n-type doped single crystal diamond, the method comprising:
- polishing a CVD grown single crystal seed having a (100) orientation;
- placing the seed in a substrate holder in a hot filament chemical vapor deposition reactor;
- evacuating the reactor to a pressure of less than 10 millitorr;
- backfilling the reactor with hydrogen having a purity of at least approximately 99.999%;
- providing power to the filament;
- heating the substrate holder to approximately 950° C.;
- adding 13C enriched methane containing phosphene to obtain a mixture of approximately 1% methane, 99% hydrogen containing approximately 100 ppm phosphene with a gas flow of approximately 100 sccm;
- converting part of the hydrogen to atomic hydrogen;
- after formation of a desired thickness of single crystal phosphorous doped diamond, terminating the flow of methane;
- after the end of flow of the methane, terminating the power;
- and
- cooling the substrate holder to room temperature.
A method of forming an n-type doped single crystal diamond, the method comprising:
- polishing a single crystal seed having a (100) orientation;
- placing the seed in a substrate holder in a hot filament chemical vapor deposition reactor;
- filling the reactor with hydrogen having a purity of at least approximately 99.999%;
- providing power to the filament;
- heating the substrate holder to approximately 950° C.;
- adding 13C enriched methane containing phosphene;
- converting part of the hydrogen to atomic hydrogen;
- after formation of a desired thickness of single crystal phosphorous doped diamond, terminating the flow of methane;
- after the end of flow of the methane, terminating the power;
- and
- cooling the substrate holder to room temperature.
A method of forming an n-type doped single crystal diamond, the method comprising:
- placing a polished seed in a substrate holder in a hot filament chemical vapor deposition reactor;
- filling the reactor with hydrogen;
- providing power to the filament;
- heating the substrate holder to approximately 950° C.;
- adding 13C enriched methane containing phosphene;
- after formation of a desired thickness of single crystal phosphorous doped diamond, terminating the flow of methane;
- after the end of flow of the methane, terminating the power;
- and
- cooling the substrate holder to room temperature.
A method of forming an n-type doped single crystal diamond, the method comprising:
- placing a polished seed in a substrate holder in a hot filament chemical vapor deposition reactor;
- filling the reactor with hydrogen;
- providing power to the filament;
- heating the substrate holder;
- adding 13C enriched methane containing phosphene;
- after formation of a desired thickness of single crystal phosphorous doped diamond, terminating the flow of methane;
- after the end of flow of the methane, terminating the power;
- and
- stopping heating of the substrate holder.
A method of forming an n-type doped single crystal diamond, the method comprising:
- placing a polished seed in a substrate holder in a hot filament chemical vapor deposition reactor;
- filling the reactor with hydrogen;
- providing power to the filament;
- heating the substrate holder;
- adding 13C enriched methane containing phosphene;
- after formation of a desired thickness of single crystal phosphorous doped diamond, terminating the flow of methane.
Dependencies are inferred from the claim text.