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AssigneesToyoda Gosei Co., Ltd., NGK Insulators, Ltd., Osaka University
InventorsShiro Yamazaki, Koji Hirata, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura, Fumio Kawamura, Yuji Yamada
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The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
A method for producing a Group III nitride compound semiconductor crystal through a flux method employing a flux, the method comprising:
A method for producing a Group III nitride compound semiconductor crystal through a flux method employing a flux, the method comprising:
A method for producing a Group III nitride compound semiconductor crystal through a flux method employing a flux, the method comprising:
Dependencies are inferred from the claim text.