Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

A nonplanar semiconductor device comprising:

• a semiconductor body having a top surface opposite a bottom surface, said semiconductor body having laterally opposite sidewalls formed above an insulating substrate;
• a gate dielectric formed on said top surface of said semiconductor body, on said laterally opposite sidewalls of said semiconductor body, and on only a portion of said bottom surface of said semiconductor body;
• a gate electrode formed on said gate dielectric on said top surface of said semiconductor body, adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body, and beneath said gate dielectric on said portion of said bottom surface of said semiconductor body, wherein said gate electrode has a pair of laterally opposite sidewalls oriented perpendicularly to said laterally opposite sidewalls of said semiconductor body, said gate electrode having a top portion above said insulating substrate and a bottom portion formed in said insulating substrates and wherein said bottom portion of said gate electrode has a larger width than said top portion of said gate electrode along said pair of laterally opposite sidewalls of said gate electrode ;
• and
• a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.