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AssigneeCree, Inc.
InventorsAdam William Saxler, Scott Sheppard, Richard Peter Smith
Estimating the term…
High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
A Group III-nitride high electron mobility transistor, comprising:
A Group III-nitride high electron mobility transistor, comprising:
A passivation structure for a wide bandgap semiconductor device comprising a layer of graphitic and/or amorphous BN on a least a portion of a surface of a region of wide bandgap semiconductor material of the wide-bandgap semiconductor device.
A passivation structure for a Group III-nitride semiconductor device comprising a layer of SiC on a least a portion of a surface of a region of Group III-nitride semiconductor material of the Group III-nitride semiconductor device.
A Group III-nitride high electron mobility transistor, comprising:
A Group III-nitride high electron mobility transistor, comprising:
Dependencies are inferred from the claim text.