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US 7,456,091 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsHidetoshi Kuraya, Hideyuki Arakawa, Fumiaki Aga
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Abstract
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area) ≧400.
Claims4
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a bump electrode over a pad with a wire passed to a capillary;
- operating the capillary in a horizontal direction with an amplitude at least more than a clearance between the wire and an inner wall of the capillary after the step of forming the bump electrode;
- and
- cutting the wire by pulling upward, holding both sides of the wire by a clamper after the step of operating the capillary in a horizontal direction;
- wherein the wire satisfies a condition:
- (modulus-of-elasticity/breaking strength per unit area) ≧400.
3 more elements
A manufacturing method of a semiconductor device, comprising the steps of:
- performing stitch bonding of a wire over a bump electrode using a capillary;
- operating the capillary in a horizontal direction with an amplitude at least more than a clearance between the wire and an inner wall of the capillary after the step of performing stitch bonding;
- and
- cutting the wire by pulling upward, holding both sides of the wire by a clamper after the step of operating the capillary in a horizontal direction;
- wherein the wire satisfies a condition:
- (modulus-of-elasticity/breaking strength per unit area) ≧400.
3 more elements
Dependencies are inferred from the claim text.