Optical coupling structure
AssigneeHoneywell International Inc.
InventorsThomas Keyser, Grenville Hughes
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Abstract
An optoelectronic coupling structure, a method of manufacture, and a method of operation are described. The optical coupling structure includes a waveguide that is formed within a device layer of an SOI substrate. A prism is located on a bottom side of the SOI substrate. A BOX layer of the SOI substrate, which is interposed between the prism and the waveguide, serves as a spacer region, which promotes an optical coupling of the prism to the waveguide. By positioning the prism below the waveguide, an optoelectronic IC may more readily accommodate a prism. The prism may be directly fabricated in a bulk layer of the SOI substrate or directly bonded to a bottom side surface of the BOX layer.
Claims20
An optical coupling structure, comprising:
- a silicon-on-insulator substrate comprising a top side and a bottom side, wherein a buried oxide layer is interposed between the top side and the bottom side;
- a wave guide formed on the top side;
- a prism formed on the bottom side, wherein a portion of the buried oxide layer serves as a spacer between the prism and the waveguide;
- and
- a cladding region that is located in the substrate adjacent to the prism and aligned below the waveguide and the buried oxide layer.
A method for making an optical coupling structure, the method comprising:
- providing a silicon-on-insulator substrate that includes a top side and a bottom side, wherein a buried oxide layer is interposed between the top side and the bottom side;
- forming a waveguide on the top side;
- and
- forming a prism on the bottom side, wherein a portion of the buried oxide layer establishes a spacing between the prism and the waveguide;
- and
- forming a cladding region in the substrate adjacent to the prism and aligned below the waveguide and the buried oxide layer.
An optical coupling structure, comprising:
- a silicon-on-insulator substrate including a top side and a bottom side, wherein a buried oxide layer is interposed between the top side and the bottom side of the silicon-on-insulator substrate;
- a first device located on the bottom side of the silicon-on-insulator substrate, wherein a portion of the buried oxide layer promotes an optical coupling of the first device to at least one device located on the top side of the silicon-on-insulator substrate;
- and
- a cladding region that is located in the substrate adjacent to the device and aligned below the at least one device on the top side of the silicon-on-insulator substrate and the buried oxide layer.
Dependencies are inferred from the claim text.