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US 7,453,915 B2Granted
Optical semiconductor element and method for manufacturing the same
AssigneeSeiko Epson Corporation
InventorYasutaka Imai
Life of this patent
Estimating the term…
Abstract
An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction.
Claims13
An optical semiconductor element comprising:
- a surface-emitting type semiconductor laser that emits laser light;
- an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction;
- a first electrode of a first polarity and a second electrode of a second polarity different from the first polarity, formed on the surface-emitting type semiconductor laser;
- a third electrode of the first polarity and a fourth electrode of the second polarity, formed on the electrostatic breakdown protection element;
- and
- a connection wiring formed on the second electrode and the third electrode for connecting the second electrode and the third electrode.
3 more elements
An optical semiconductor element comprising:
- a surface-emitting type semiconductor laser that emits laser light;
- and
- an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction,
- wherein the electrostatic breakdown protection element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer that functions as a photoabsorption layer and an electrostatic breakdown protection layer, and a third semiconductor layer of a second conductivity type, and a total optical film thickness of the electrostatic breakdown protection element is a film thickness other than a film thickness that establishes a resonance condition of the laser light within the electrostatic breakdown protection element.
1 more element
Dependencies are inferred from the claim text.