Flash memory device with word line discharge unit and data read method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorHo-Jung Kim
Life of this patent
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Abstract
Exemplary embodiments of the present invention provide a flash memory device which includes a memory cell array. A decoder circuit is connected to the memory cell array via a plurality of select lines and a plurality of word lines. The detector circuit supplies voltages for a read operation to the plurality of select lines and the plurality of word lines during the read operation. A word line discharge unit is connected to the memory cell array via the plurality of word lines. The word line discharge unit discharges a voltage level of a selected word line during the read operation.
Claims18
A flash memory device comprising:
- a memory cell array;
- a decoder circuit connected to the memory cell array via a plurality of select lines and a plurality of word lines, for supplying voltages for a read operation to the plurality of select lines and the plurality of word lines during the read operation;
- and
- a word line discharge unit connected to the memory cell array via the plurality of word lines, for discharging a voltage level of a selected word line, of the plurality of word lines, during the read operation.
A flash memory device comprising:
- a memory cell array comprising an XIP flash structure where a memory cell is connected between a first select transistor and a second select transistor, the first and second select transistors being connected to first and second select lines, respectively, and the memory cell being connected to a word line;
- and
- a word line discharge unit connected to the memory cell array via the word line, for discharging a voltage level of the word line during a read operation.
A method for reading data from a flash memory device comprising first and second select transistors connected to first and second select lines, respectively, and at least one memory cell connected between the first and second select transistors and to a word line, the method comprising:
- supplying the first and second select lines and the word line with voltages for a read operation and simultaneously discharging a voltage of the word line.
Dependencies are inferred from the claim text.