Program method with optimized voltage level for flash memory

A method of operating a non-volatile memory, comprising:

• programming a plurality of data bits of data to be programmed into the non-volatile memory by applying a programming voltage to a plurality of memory cells;
• verifying the programmed data in the non-volatile memory;
• and
• increasing the programming voltage in a selected relation to the number of the plurality of data bits that failed to correctly program into the plurality of memory cells of the non-volatile memory.

A non-volatile memory device comprising:

• a non-volatile memory array;
• wherein the non-volatile memory device is adapted to program a plurality of data bits into the non-volatile memory array by,
• applying a programming voltage to a plurality of memory cells that are selected to be programmed with the plurality of data bits,
• verifying the plurality of data bits programmed into the plurality of memory cells of the non-volatile memory array, and
• increasing the programming voltage in a selected relation to the percentage of the plurality of data bits that failed to correctly program into the plurality of memory cells.

A system comprising:

• a host coupled to one or more non-volatile memory devices, wherein the system is adapted to program a plurality of data bits into a selected non-volatile memory device in a programming operation by,
• applying a programming voltage to a plurality of memory cells of the selected non-volatile memory device that are selected to be programmed with the plurality of data bits,
• verifying the plurality of data bits programmed into the plurality of memory cells of the selected non-volatile memory device, and
• increasing the programming voltage in a selected relation to the percentage of the plurality of data bits that failed to correctly program into the plurality of memory cells.