Flash memory device having improved program rate
AssigneeSpansion LLC
InventorsAaron Lee, Hounien Chen, Sachit Chandra, Nancy Leong, Guowei Wang
Life of this patent
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Abstract
A method is provided for programming a nonvolatile memory device including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window that identifies a plurality of memory cells in the array. A first group of memory cells to be programmed is identified from the plurality of memory cells in the programming window. The first group of memory cells is programmed and a programming state of the first group of memory cells is verified.
Claims19
A method for programming a group of non-volatile memory cells in an array of non-volatile memory cells, comprising:
- receiving a programming window that identifies a plurality of memory cells in the array of non-volatile memory cells, where the programming window identifies fewer than one half of a total number of non-volatile memory cells in a row of memory cells in the array or more than one half of the total number of non-volatile memory cells in the row of memory cells in the array;
- identifying a group of non-volatile memory cells to be programmed from the plurality of memory cells in the programming window;
- programming the group of non-volatile memory cells;
- determining a programming state for each memory cell in the group of non-volatile memory cells;
- storing, in a buffer, the programming state for each memory cell in the group of non-volatile memory cells;
- identifying non-programmed memory cells in the group of non-volatile memory cells based on the programming state for each memory cell in the group of non-volatile memory cells stored in the buffer;
- and
- reprogramming the non-programmed memory cells.
A device, comprising:
- an array of non-volatile memory cells;
- a state control component for receiving a programming window that identifies a plurality of memory cells in the array of non-volatile memory cells, where the programming window identifies fewer than one half of a total number of non-volatile memory cells in a row of memory cells in the array or more than one half of the total number of non-volatile memory cells in the row of memory cells in the array,
- where the state control component identifies a group of non-volatile memory cells to be programmed from the plurality of memory cells in the programming window,
- where the state control component is configured to program the group of non-volatile memory cells in the array of non-volatile memory cells;
- sense amplifier circuitry to determine a programming state of each of the group of non-volatile memory cells;
- and
- a buffer,
- wherein the sense amplifier circuitry is further configured to:
- store, in the buffer, the programming state for each memory cell in the group of non-volatile memory cells, and
- identify non-programmed memory cells in the group of non-volatile memory cells based on the programming states stored in the buffer, and
- wherein the state control component is further configured to reprogram the non-programmed memory cells.
A method, comprising:
- receiving a programming window that identifies a plurality of memory cells in the array of non-volatile memory cells, where the programming window identifies fewer than one half of a total number of non-volatile memory cells in a row of memory cells in the array or more than one half of the total number of non-volatile memory cells in the row of memory cells in the array;
- identifying a group of non-volatile memory cells in an array of non-volatile memory cells;
- performing a programming operation on the group of non-volatile memory cells;
- writing, to a buffer, values corresponding to programming states for each non-volatile memory cell in the group of non-volatile memory cells;
- identifying non-programmed memory cells based on the programming states stored in the buffer;
- and
- performing a second programming operation on the non-programmed memory cells.
Dependencies are inferred from the claim text.