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US 7,453,715 B2Granted
Reading a phase change memory
AssigneeOvonyx, Inc.
InventorWard D. Parkinson
Life of this patent
Estimating the term…
Abstract
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
Claims8
A method comprising:
- reading a cell on a line by triggering the phase change memory cell;
- providing a reference level from said line;
- comparing said reference level to a level on said line after a time delay;
- using a reference level derived from the voltage on the line;
- and
- comparing the reference voltage generated before a read current to the selected line is reduced, to a reference voltage generated on the selected line after the read current is reduced and then increased.
3 more elements
Dependencies are inferred from the claim text.