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US 7,453,673 B2Granted
Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head
AssigneeSeagate Technology LLC
InventorsZheng Gao, Song S. Xue, Eric Leroy Granstrom
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Abstract
A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.
Claims17
A magnetic tunneling junction device comprising:
- a fixed ferromagnetic layer;
- a free ferromagnetic layer;
- and
- an insulating tunneling barrier layer comprised of gallium oxide and located between and in contact with the fixed and free ferromagnetic layers;
- wherein the magnetic tunneling junction device has a resistance area (RA) product less than 7 Ω·μm2;
- and has a magnetoresistance (MR) ratio of at least 30% at room temperature.
3 more elements
Dependencies are inferred from the claim text.