Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material

Magnetoresistive device comprising:

• a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetisation directions can vary under the influence of a magnetic field, and
• at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges passing through the thickness of the dielectric or semiconducting layer, these bridges being designed to locally concentrate the current that passes transversely through the stack, comprising means for circulating a current in the spin valve transverse to the plane of the layers, wherein the dielectric or semiconducting layer with electrically conducting bridges is arranged adjacent to at least one of the magnetic layers and at least one of the electrically conducting bridges are made from a magnetic material such as cobalt, iron, nickel or alloys of cobalt, iron or nickel.