Method of producing domain inversion parts and optical devices
AssigneeNGK Insulators, Ltd.
InventorsShoichiro Yamaguchi, Makoto Iwai, Yuichi Iwata
Life of this patent
Estimating the term…
Loading patent…
AssigneeNGK Insulators, Ltd.
InventorsShoichiro Yamaguchi, Makoto Iwai, Yuichi Iwata
Estimating the term…
A comb electrode 3 is provided on a first main face 2a and a uniform electrode 4 is provided on a second main face 2b of a substrate made of a ferroelectric single crystal of a single domain, and a voltage is applied on the comb electrode 3 and the uniform electrode 4 to produce domain inversion part. It is laminated, on the substrate, an underlying substrate comprising a main body 5, a first conductive film 6 provided on a first main face 5a and a second conductive film 7 provided on a second main face 5b of the main body 5. The uniform electrode 4 is electrically conducted with the first conductive film 6 and a voltage is applied on the comb electrode 3 and the second conductive film 7 to form a domain inversion part in the substrate 2.
A method of producing domain inversion part in a substrate of a ferroelectric single crystal by providing a comb electrode on a first main face of said substrate of said ferroelectric single crystal of a single domain and a uniform electrode on a second main face of said substrate and by applying a voltage on said comb electrode and said uniform electrode, said method comprising the steps of:
Dependencies are inferred from the claim text.