Method and apparatus for inspecting foreign particle defects
AssigneeHitachi High-Technologies Corporation
InventorsSachio Uto, Hiroyuki Nakano
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AssigneeHitachi High-Technologies Corporation
InventorsSachio Uto, Hiroyuki Nakano
Estimating the term…
The invention relates to a device production process for forming a circuit pattern on a substrate such as semiconductor device. To enable a stable inspection of a minute foreign particle and a pattern defect occurring in manufacture of a device at a high speed and with a high sensitivity, an object to be inspected on which a transparent film is formed, is irradiated with a beam which is emitted from an illuminator whose illumination direction and illumination angle are selected from a plurality of choices to be optimum, so that scattered reflected light from a minute foreign particle defect on the object or the transparent film is effectively detected by eliminating a noise from the pattern formed on the object, and a detection optical system is optimized by evaluating and adjusting, with an image forming performance checker, an image forming performance of the detection optical system included in an inspecting apparatus.
An apparatus for inspecting a foreign particle defect, comprising:
An for inspecting a foreign particle defect, comprising:
A method for inspecting a foreign particle defect, comprising the steps of:
Dependencies are inferred from the claim text.