Method for testing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Hui Liang, Chia-Lin Chen, Pei-Chun Liao, Chin-Yuan Ko
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Abstract
A method for testing a batch of semiconductor devices in wafer level is provided. The method includes the following steps: (a) obtaining a breakdown voltage of gate dielectric of each semiconductor device; (b) applying, to the gate dielectric of each semiconductor device, a stress voltage below the breakdown voltage but above a base voltage of gate dielectric of the semiconductor devices; (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at the base voltage; and (d) obtaining a tailing distribution from the measured currents.
Claims15
A method for testing a batch of semiconductor devices in wafer level, comprising:
- (a) obtaining a breakdown voltage;
- (b) applying, to the gate dielectric of semiconductor devices, a stress voltage below said breakdown voltage but above a base voltage of gate dielectric of said semiconductor devices;
- (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at said base voltage;
- and
- (d) obtaining a tailing distribution from said measured currents.
A program storage device readable by machine, tangibly embodying a program of instruction executable by the machine to perform a method for testing a batch of semiconductor devices in wafer level, said method comprising:
- (a) obtaining a breakdown voltage;
- (b) applying, to the gate dielectric of semiconductor devices, a stress voltage below said breakdown voltage but above a base voltage of gate dielectric of said semiconductor devices;
- (c) after the step (b), measuring currents of gate dielectric of each semiconductor devices at said base voltage;
- and
- (d) obtaining a tailing distribution from said measured currents.
Dependencies are inferred from the claim text.