Method of and system for monitoring the functionality of a wafer probe site

A method of monitoring the functionality of a wafer probe site, the method comprising:

• partitioning a wafer into a plurality of sectors comprising predetermined semiconductor dies, wherein semiconductor dies from different sectors comprise different performance characteristics based upon the location of the sectors on the wafer;
• applying a multi-site probe of a wafer sorter to a plurality of semiconductor wafers comprising semiconductor dies in a least one sector of the plurality of sectors;
• comparing a first failure rate of a first probe site of the multi-site probe with a second failure rate of a second probe site of the multi-site probe for a plurality of semiconductor dies of the plurality of wafers in the at least one sector during a wafer sorting process;
• determining that a probe site of the multi-site probe is defective based upon comparing the first failure rate of the first probe site of the multi-site probe with the second failure rate of the second probe site of the multi-site probe and the location of the at least one sector during the wafer sorting process;
• and
• retesting semiconductor dies of the plurality of semiconductor wafers.

A system for monitoring the functionality of a wafer probe site, the system comprising:

• a multi-site probe having a plurality of probe sites;
• a wafer sorter coupling a wafer to the multi-site probe, the wafer being partitioned into a plurality of different sectors comprising predetermined semiconductor dies, wherein semiconductor dies from the different sectors comprise different performance characteristics based upon the location of the sectors on the wafer;
• a test computer coupled to apply test vectors to the multi-site probe and receive output signals from the multi-site probe;
• and
• an output of the test computer comprising a comparison of a first failure rate of a first probe site of the multi-site probe with a second failure rate of a second probe site of the multi-site probe for a test of a plurality of semiconductor dies in at least one sector of the plurality of sectors, wherein the output comprises a determination of a defective probe site of the multi-site probe based upon the comparison of the first failure rate and the second failure rate and the location of the at least one sector on the wafer.