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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Lin Huang, Ching-Hua Hsieh, Hsien-Ming Lee, Shing-Chyang Pan, Chao-Hsien Peng, Li-Lin Su, Jing-Cheng Lin, Shao-Lin Shue, Mong-Song Liang
Estimating the term…
A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.
A semiconductor device comprising a barrier layer having multiple portions along its length, each portion formed of a different combination of material layers and including a first portion disposed between a conductive layer and a dielectric layer, said first portion comprising a composite structure having a plurality of layers including a crystalline layer and an amorphous layer, wherein said amorphous layer forms a conterminous boundary with said dielectric layer and said crystalline layer forms a conterminous boundary with said conductive layer, and a second portion that extends between said conductive layer and a conductive portion, said second portion of said barrier layer including said crystalline layer forming said conterminous boundary with said conductive layer and a further crystalline layer forming a conterminous boundary with said conductive portion.
A semiconductor device comprising a barrier layer including at least two sections along its length, each section formed of a different combination of material layers and including a first section disposed between a first conductive material and a second conductive material and a second section disposed between said first conductive material and a dielectric layer, said first section including a layer of a first crystalline material forming a conterminous boundary with said first conductive material and a further layer of said first crystalline material forming a conterminous boundary with said second conductive material and said second section having said layer of said first crystalline material forming a conterminous boundary with said first conductive material and an amorphous layer forming a conterminous boundary with said dielectric layer.
A semiconductor device comprising a dielectric portion, a conductive portion and a composite barrier layer having multiple portions along its length, each portion formed of a different combination of material layers and including a first portion interposed between said dielectric portion and said conductive portion, said first portion comprising a layer of a first crystalline material forming a conterminous boundary with said conductive portion, and a further layer of said first crystalline material forming a conterminous boundary with said dielectric portion with a layer of a different crystalline material interposed therebetween and a second portion that extends between said conductive portion and a further conductive portion and includes a further layer of said different crystalline material forming a conterminous boundary with said further conductive portion.
A semiconductor device comprising a continuous barrier layer having multiple portions along its length, each portion formed of a different combination of material layers and comprising:
Dependencies are inferred from the claim text.