US 7,453,147 B2 · Semiconductor device, its manufacturing method, and radio communication device

Abstract

The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Claims30

Dependent claims

A semiconductor device, comprising:

a wiring substrate;
a plurality of semiconductor chips, in each of which a field-effect transistor is built, each of said semiconductor chips being fixed over a metallized layer provided over a main surface of said wiring substrate with a fusion bonding material therebetween;
and
a conductive wire for electrically connecting each of the gate electrode and the drain electrode of said semiconductor chip to a bonding pad formed over the main surface of said wiring substrate,
wherein each of said plurality of field-effect transistors is connected to another in order serially so as to configure each of a plurality of amplification stages of a multistage amplifier unit, and
wherein at least in one of said plurality of transistors, the drain wire for connecting said drain electrode to said bonding pad is set shorter than the gate wire for connecting said gate electrode to said bonding pad.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device, its manufacturing method, and radio communication device

Life of this patent

Semiconductor device, its manufacturing method, and radio communication device

Life of this patent

Abstract

Claims30