Back to results
US 7,453,134 B2Granted
Integrated circuit device with a circuit element formed on an active region having rounded corners
AssigneeMicron Technology, Inc.
InventorsSukesh Sandhu, Kevin Torek
Life of this patent
Estimating the term…
Abstract
An integrated circuit device has a substrate with first and second portions. One or more first active regions are formed in the first portion of the substrate. Each of the one or more first active regions has rounded corners. One or more first circuit elements are formed on the one or more first active regions after the corners of the one or more first active regions have been rounded. One or more second active regions are formed in the second portion of the substrate. One or more second circuit elements are formed on the one or more second active regions.
Claims21
An integrated circuit device comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more first circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the first circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate;
- and
- one or more second circuit elements formed on the one or more second active regions.
5 more elements
A memory device comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate;
- and
- one or more memory cells formed on the one or more second active regions.
5 more elements
An integrated circuit device comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more first circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the first circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate, wherein each of the one or more second active regions has rounded corners;
- a second dielectric layer formed on opposing sidewalls of the one or more second active regions;
- a second isolation region formed on each of the second dielectric layers so that a sidewall of each second isolation region is flush with an end of the second dielectric layer on which that second isolation region is formed;
- and
- one or more second circuit elements formed on the one or more second active regions.
7 more elements
A memory device comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate;
- a second dielectric layer formed on opposing sidewalls of the one or more second active regions;
- a second isolation region formed on each of the second dielectric layers so that a sidewall of each second isolation region is flush with an end of the second dielectric layer on which that second isolation region is formed;
- and
- one or more memory cells formed on the one or more second active regions.
7 more elements
A memory device comprising:
- a periphery;
- a memory portion;
- one or more first active regions formed in the periphery, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more field-effect transistors formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the circuit elements thereon;
- one or more second active regions formed in the memory portion;
- and
- one or more floating-gate memory cells formed on the one or more second active regions.
6 more elements
A memory device comprising:
- a periphery;
- a memory portion;
- one or more first active regions formed in the periphery, wherein each of the one or more first active regions has rounded corners;
- a first dielectric layer formed on opposing sidewalls of the one or more first active regions;
- a first isolation region formed on each of the first dielectric layers so that a sidewall of each first isolation region is flush with an end of the first dielectric layer on which that first isolation region is formed;
- one or more field-effect transistors formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the circuit elements thereon;
- one or more second active regions formed in the memory portion;
- a second dielectric layer formed on opposing sidewalls of the one or more second active regions;
- a second isolation region formed on each of the second dielectric layers so that a sidewall of each second isolation region is flush with an end of the second dielectric layer on which that second isolation region is formed;
- and
- one or more floating-gate memory cells formed on the one or more second active regions.
8 more elements
An electronic system comprising:
- a processor;
- and
- an integrated circuit device coupled to the processor, and comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a dielectric layer formed on opposing sidewalls of the one or more first active regions;
- an isolation region formed on each of the dielectric layers so that a sidewall of each first isolation region is flush with an end of the dielectric layer on which that isolation region is formed;
- one or more first circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the first circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate;
- and
- one or more second circuit elements formed on the one or more second active regions.
8 more elements
An electronic system comprising:
- a processor;
- and
- a memory device coupled to the processor, and comprising:
- a substrate having first and second portions;
- one or more first active regions formed in the first portion of the substrate, wherein each of the one or more first active regions has rounded corners;
- a dielectric layer formed on opposing sidewalls of the one or more first active regions;
- an isolation region formed on each of the dielectric layers so that a sidewall of each first isolation region is flush with an end of the dielectric layer on which that isolation region is formed;
- one or more circuit elements formed on the one or more first active regions, wherein corners of the one or more first active regions have been rounded prior to forming the circuit elements thereon;
- one or more second active regions formed in the second portion of the substrate;
- and
- one or more memory cells formed on the one or more second active regions.
8 more elements
Dependencies are inferred from the claim text.