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US 7,453,121 B2Granted
Body contact formation in partially depleted silicon on insulator device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShui-Ming Cheng, Ka-Hing Fung, Yin-Pin Wang
Life of this patent
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Abstract
An SOI device (100) has a gate electrode with one or more additional gate regions (120), and oxygen or halogen ions (128) under the additional gate regions (120). The oxygen or halogen ions (128) form thicker gate oxide regions or shallow trench isolation regions.
Claims19
An SOI device having a gate, comprising:
- oxygen ions providing discrete implant regions in a substrate of an SOI device, the discrete implant regions extending to a surface of the substrate;
- one or more additional gate regions forming an H-gate or a T-gate and covering all discrete implant regions under the one or more additional gate regions, and
- a gate oxide layer covering but not encroaching the discrete implant regions and being under the one or more additional gate regions, the gate oxide layer including a thin gate oxide layer, and a thicker gate oxide layer covering the discrete implant regions,
- the discrete implant regions forming gate oxide regions and reducing substrate resistance under each of the additional gate regions.
1 more element
An SOI device having a gate, comprising:
- oxygen ions providing discrete implant regions in a substrate of an SOI device, the discrete implant regions extending to a surface of the substrate;
- one or more additional gate regions forming an H-gate or a T-gate and covering the discrete implant regions, and,
- a gate oxide layer formed over the surface and covering the discrete implant regions and being under the one or more additional gate regions, the gate oxide layer having a greater thickness over the discrete implant regions than over regions other than the discrete implant regions,
- the discrete implant regions forming gate oxide regions and reducing substrate resistance under each of the additional gate regions.
1 more element
An SOI device having a gate, comprising:
- a plurality of gate regions forming an H-gate or a T-gate and covering thick oxide regions and thin oxide regions,
- each said thick oxide region comprising a discrete implant region of oxygen ions formed in a substrate of an SOI device and extending to a surface of the substrate, and an oxide layer formed over but not encroaching the surface;
- and
- each said thin oxide region comprising only said oxide layer,
- said oxide layer having substantially the same thickness in said thick oxide regions and said thin oxide regions.
2 more elements
Dependencies are inferred from the claim text.