Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact

A semiconductor power device comprising a plurality of power transistor cells surrounded by a plurality of trenches opened in a semiconductor substrate wherein:

• at least one of said cells constituting an active cell having a source region disposed next to a trenched gate having a gate material filling in said trenches electrically connecting to a gate pad and surrounding said cell wherein said trenched gate further having a bottom shielding electrode filled with a conductive material disposed below and insulated from said trenched gate;
• at least one of said cells constituting a connecting cell surrounded by said trenches with a portion functioning as a connecting trench filled with said conductive material as a connecting electrode for electrically connecting between said bottom shielding electrode and a metal disposed directly on top of said connecting trench;
• and
• at least an active cell further includes a trenched source contact opened between said trenches wherein said trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of said trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell.