Phase-change memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Chang Ryoo, Ju-Chul Park, Se-Ahn Song, Yoon-Jong Song
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Abstract
Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.
Claims13
A phase-change memory device comprising:
- a phase-change material pattern;
- first and second electrodes providing an electrical signal to the phase-change material pattern;
- and
- a diffusion barrier layer comprising tellurium and contacting the first electrode to thereby inhibiting atomic diffusion from the first electrode into the phase-change material pattern.
A phase-change memory device comprising:
- a bottom electrode in a semiconductor substrate;
- a phase-change material pattern on the bottom electrode;
- a first diffusion barrier layer comprising tellurium on the phase-change material pattern;
- and
- a top electrode comprising titanium on the first diffusion barrier layer,
- wherein the first diffusion barrier layer inhibits diffusion of titanium from the top electrode into the phase-change material pattern.
A phase-change memory device comprising:
- a bottom electrode in a semiconductor substrate;
- a phase-change material pattern on the bottom electrode;
- a top electrode comprising titanium on the phase-change material pattern;
- and
- a diffusion barrier layer comprising tellurium on the top electrode, wherein the diffusion barrier layer inhibits diffusion of titanium from the top electrode into the phase-change material pattern.
Dependencies are inferred from the claim text.