CMOS image sensor and method for manufacturing the same

Abstract

Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue photodiode region is formed having a predetermined depth in the first photodiode region. The red photodiode region is formed in the first photodiode region having a depth greater than that of the blue photodiode region with a gap separating the red photodiode region from the blue photodiode region. The green photodiode region is formed in the second photodiode region having a depth between the depths of the blue and red photodiode regions. The overcoat layer is formed on the semiconductor substrate, and microlenses are formed on the overcoat layer to correspond to the first and second photodiode regions.

Dependencies are inferred from the claim text.