Solid-state image sensor and imaging system
AssigneeCanon Kabushiki Kaisha
InventorsToru Koizumi, Akira Okita, Tetsuya Itano, Sakae Hashimoto, Ryuichi Mishima
Life of this patent
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Abstract
At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
Claims20
A solid-state image sensor including a substrate, light-receiving sections placed on the substrate, a plurality of wiring layers, a plurality of interlayer insulating layers, and a first insulating layer, the wiring layers and the interlayer insulating layers being alternately arranged on the substrate, at least one of the wiring layers being placed on the first insulating layer, the solid-state image sensor comprising:
- a second insulating layer which is placed on the wiring layer on the first insulating layer, which has portions in contact with the first insulating layer, the portions being located at the positions corresponding to the light-receiving sections, and which has a refractive index different from that of the first insulating layer;
- a third insulating layer which is placed above the light-receiving sections and which reduces reflected light from the interface between the substrate and the interlayer insulating layer placed on the substrate;
- and
- a fourth insulating layer having a refractive index different from that of the second insulating layer and that of the first insulating layer, wherein the fourth insulating layer is placed between the first insulating layer and the second insulating layer, wherein the wiring layer on the first insulating layer is between the second insulating layer and the first insulating layer.
A solid-state image sensor including a substrate, light-receiving sections placed on the substrate, a plurality of wiring layers, a plurality of interlayer insulating layers, and a substantially flat first insulating layer, the wiring layers and the interlayer insulating layers being alternately arranged on the substrate, at least one of the wiring layers being placed on the first insulating layer, the solid-state image sensor comprising:
- a silicon oxide layer;
- a plurality of silicon nitride layers having a first silicon nitride layer and a second silicon nitride layer;
- and
- a silicon oxynitride layer,
- wherein the silicon oxide layer and the first silicon nitride layer are placed above the light-receiving sections in that order from the light-receiving section side, and the second silicon nitride layer is placed on the wiring layer on the first insulating layer and has portions in contact with the first insulating layer with the silicon oxynitride layer placed therebetween, and the contact portions correspond to the light-receiving sections.
A solid-state image sensor in which light-receiving sections are placed in a substrate, a plurality of wiring layers are provided above the substrate through interlayer insulating layers and a first insulating layer is placed on at least one of the wiring layers,
- wherein a silicon oxide layer and a first silicon nitride layer are placed on at least a part of the light-receiving section in this order from the light-receiving section side, and
- wherein a silicon oxynitride layer and a second silicon nitride layer are placed in this order on the first insulating layer at a position corresponding to the light-receiving section.
A solid-state image sensor in which light-receiving sections are placed in a substrate, a plurality of wiring layers are provided above the substrate through interlayer insulating layers and a first insulating layer is placed on at least one of the wiring layers, the solid-state image sensor comprising:
- a second insulating layer which is placed on the first insulating layer and which has a refractive index different from that of the first insulating layer;
- a third insulating layer which is placed above at least a part of the light-receiving section and which reduces reflected light from the interface between the substrate and the interlayer insulating layer;
- and
- a fourth insulating layer which is placed between the first insulating layer and the second insulating layer and which reduces reflected light from the interface between the first insulating layer and the second insulating layer.
Dependencies are inferred from the claim text.