Semiconductor device with stress reducing trench fill containing semiconductor microparticles in shallow trench isolation
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Takeoka, Junji Hirase
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a semiconductor substrate formed with an active region and an isolation region and having a trench formed in the isolation region; an isolation insulating film embedded in the trench of the semiconductor substrate; and semiconductor nanocrystals buried in the isolation insulating film. The coefficient of linear expansion of the semiconductor nanocrystal is closer to that of the semiconductor substrate rather than that of the isolation insulating film, so that stress applied to the active region after a thermal treatment or the like is reduced.
Claims19
A semiconductor device which comprises a first isolation region formed in a semiconductor substrate,
- wherein a first trench surrounding a first active region of the semiconductor substrate and a first insulating film embedded in the first trench are formed in the first isolation region, and
- the first insulating film contains semiconductor microparticles made of a group IV semiconductor crystal and at least either of a p-type impurity and an n-type impurity.
A semiconductor device which comprises a first isolation region formed in a semiconductor substrate,
- wherein a first trench surrounding a first active region of the semiconductor substrate and a first insulating film embedded in the first trench are formed in the first isolation region,
- the first insulating film contains semiconductor microparticles made of a group IV semiconductor crystal,
- the device further comprises an impurity diffusion layer formed in the first active region,
- wherein the first trench in the first isolation region is formed to have a greater depth from the surface of the semiconductor substrate than the impurity diffusion layer, and
- the semiconductor microparticles within the first insulating film are present in a region thereof located more shallowly than the deepest portion of the impurity diffusion layer in the depth direction from the surface of the semiconductor substrate.
A semiconductor device which comprises a first isolation region formed in a semiconductor substrate,
- wherein a first trench surrounding a first active region of the semiconductor substrate and a first insulating film embedded in the first trench are formed in the first isolation region,
- the first insulating film contains semiconductor microparticles made of a group IV semiconductor crystal,
- the device further comprises in the semiconductor substrate, a second isolation region in which a second trench surrounding a second active region of the semiconductor substrate and a second insulating film embedded in the second trench are formed, and
- wherein the second insulating film does not contain the semiconductor microparticles.
Dependencies are inferred from the claim text.