Nanowire light emitting device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
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Abstract
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
Claims7
A nanowire light emitting device comprising:
- a substrate;
- a first conductive layer formed on the substrate;
- a plurality of nanowires vertically formed on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion separately;
- a light emitting layer between the p-type doped portion and the n-type doped portion;
- a second conductive layer formed on the nanowires;
- and
- an insulating polymer, not containing dopant ions, filling a space between the nanowires on the first conductive layer;
- wherein the n-type doped portion includes a portion including molecules having a low ionization potential,
- wherein the p-type doped portion includes a portion including molecules having a high electron affinity,
- wherein the molecules having the high electron affinity contain fluorine,
- wherein the molecules having a low ionization potential are molecules containing at least one metal selected from the group consisting of lithium, copper, and zinc, or organic molecules.
Dependencies are inferred from the claim text.