Light emitting device and light emitting element having predetermined optical form

A light emitting device, comprising:

• a predetermined optical form that is provided on a surface of an LED element mounted on a base, the predetermined optical form being made to allow an increase in efficiency of taken out light from an inside of the LED element;
• and
• a sealing material that seals the LED element,
• wherein the sealing material has a refractive index of 1.6 or more,
• the predetermined optical form is formed to comprise a combination of uneven forms having different forms and different depths in a surface of a semiconductor layer that is exposed by peeling a substrate and comprises a surface of the LED element,
• the LED element is flip mounted on the base,
• the sealing material comprises glass an SiO2—Nb2O5 based glass as a matrix material, and
• the sealing material directly contacts the predetermined optical form.

A light emitting element, comprising:

• a semiconductor layer that comprises a light emitting layer, a predetermined optical form that is provided on one surface of the semiconductor layer, the predetermined optical form being made to allow an increase in efficiency of taken out light from an inside of the light emitting element (LED element);
• an electrode part that is provided on the other surface of semiconductor layer;
• and
• a sealing material that seals the LED element, the sealing material comprising an SiO2—Nb2O5 based glass as a matrix material,
• wherein the predetermined optical form is an uneven surface comprising a rectangular projection of different forms and different depths in a vertical cross section of the semiconductor layer.

A light emitting element, comprising:

• a semiconductor layer that comprises a light emitting layer, a predetermined optical form that is provided on one surface of the semiconductor layer, the predetermined optical form being made to allow an increase in efficiency of taken out light from an inside of the light emitting element (LED element);
• an electrode part that is provided on the other surface of semiconductor layer;
• a light transmitting material layer that is provided on one surface of the semiconductor layer;
• and
• a sealing material that seals the LED element, the sealing material comprising an SiO2—Nb2O5 based glass as a matrix material.
• wherein the predetermined optical form is formed in a surface of the light transmitting material layer, and
• the light transmitting material layer comprises GaN,
• wherein the predetermined optical form is an uneven surface comprising a rectangular projection of different forms and different depths in a vertical cross section of the light transmitting material layer.