Gallium nitride-based semiconductor device
AssigneeShowa Denko K.K.
InventorsMasato Kobayakawa, Hideki Tomozawa, Hisayuki Miki
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Abstract
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
Claims8
A gallium nitride-based semiconductor device having a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction, wherein the p-type layer comprises a top portion and an inner portion located under the top portion, wherein the inner portion contains the p-type impurity element and, in combination therewith, hydrogen, and wherein the top portion of the p-type layer has a hydrogen content that is less than the amount of the hydrogen contained in the inner portion.
Dependencies are inferred from the claim text.