Nano-elastic memory device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJoo-han Chang, Dong-hun Kang, Young-kwan Cha, Wan-jun Park
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Abstract
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
Claims17
A nano-elastic memory device comprising:
- at least one lower electrode;
- at least one upper electrode vertically separated from the at least one lower electrode, the at least one lower electrode perpendicularly crosses the at least one upper electrode;
- and
- at least one nano-elastic body grown on one of the at least one lower electrode and the at least one upper electrode towards the other of the at least one lower electrode and the at least one upper electrode.
Dependencies are inferred from the claim text.