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US 7,453,084 B2Granted
Spin transistor with ultra-low energy base-collector barrier
AssigneeSeagate Technology LLC
InventorsJanusz J. Nowak, Brian W. Karr, David H. Olson, Eric S. Linville, Paul E. Anderson
Life of this patent
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Abstract
A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10−3.
Claims20
A transistor comprising:
- a metal emitter;
- a spin-selective base comprising a fixed magnetic layer, a free magnetic layer, and a non-magnetic layer interposed between the fixed magnetic layer and the free magnetic layer;
- a metal collector;
- a first tunneling barrier interposed between the spin-selective base and the metal emitter;
- and
- a second tunneling barrier interposed between the spin-selective base and the metal collector, such that the transistor has a transfer ratio of more than 10−3.
3 more elements
A transistor comprising:
- a metal emitter;
- a spin-selective base comprising a fixed magnetic layer, a free magnetic layer, and a non-magnetic layer interposed between the fixed magnetic layer and the free magnetic layer;
- a metal collector;
- a first tunneling barrier having a first barrier energy and interposed between the spin-selective base and the metal emitter;
- and
- a second tunneling barrier interposed between the spin-selective base and the metal collector and having a second barrier energy less than 500 meV, such that the transistor has a transfer ratio larger than 10−3.
3 more elements
A transistor comprising:
- a metal emitter;
- a spin-selective base comprising a fixed magnetic layer, a free magnetic layer, and a non-magnetic layer interposed between the fixed magnetic layer and the free magnetic layer;
- a metal collector;
- a first tunneling barrier interposed between the spin-selective base and the emitter;
- and
- a second tunneling barrier interposed between the spin-selective base and the metal collector and having a thickness of 10 angstroms or less, such that the transistor has a transfer ratio larger than 10−3.
3 more elements
Dependencies are inferred from the claim text.