Back to results
US 7,453,082 B2Granted
Small electrode for a chalcogenide switching device and method for fabricating same
AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
Life of this patent
Estimating the term…
Abstract
A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.
Claims19
A memory cell comprising:
- a memory element comprising a memory material disposed between a first electrode and a second electrode, the first electrode being disposed within a pore formed in a dielectric material, wherein the memory material is disposed over the pore in contact with the dielectric material in which the pore is formed;
- and
- an access device being coupled to the first electrode and being self-aligned with the memory element.
A memory cell comprising:
- an access device;
- and
- a memory element operatively coupled to the access device, the memory element comprising:
- a first electrode disposed within a pore formed in a dielectric material;
- a memory material disposed over the first electrode, wherein a junction area between the first electrode and the memory material is defined by dimensions of the pore and is smaller than a lateral cross-sectional area of the memory material;
- and
- a second electrode disposed over the memory material.
4 more elements
Dependencies are inferred from the claim text.