Back to results
US 7,453,081 B2Granted
Phase change memory cell including nanocomposite insulator
AssigneeQimonda North America Corp.
InventorsThomas Happ, Jan Boris Philipp
Life of this patent
Estimating the term…
Abstract
A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.
Claims39
A memory cell comprising:
- a first electrode;
- a second electrode;
- a storage material positioned between the first electrode and the second electrode;
- and
- a nanocomposite insulator contacting the storage material;
- wherein the nanocomposite insulator comprises a first material comprising a phase change material and a nano-scaled material comprising insulating nanoparticles distributed within a portion of the first material.
3 more elements
A memory cell comprising:
- a first electrode;
- a second electrode;
- a memory element including storage material extending from a first contact with the first electrode to a second contact with the second electrode;
- and
- a nanoporous insulator comprising phase change material contacting the memory element, wherein at least a portion of the nanoporous insulator is formed by a diffusion of the storage material into a porous material.
2 more elements
A memory cell comprising:
- a first electrode;
- a second electrode;
- a phase change memory element extending from a first contact with the first electrode to a second contact with the second electrode;
- an insulator contacting the phase change memory element, the insulator comprising phase change material;
- and
- means for reducing the thermal conductivity of the insulator.
3 more elements
A memory device comprising:
- a distribution circuit;
- a write pulse generator electrically coupled to the distribution circuit;
- a sense circuit electrically coupled to the distribution circuit and electrically coupled to the write pulse generator through a signal path;
- and
- an array of memory cells electrically coupled to the distribution circuit, each memory cell including opposing electrodes and comprising:
- a phase change memory element extending between the opposing electrodes,
- a nanocomposite insulator surrounding the phase change memory element;
- wherein the nanocomposite insulator comprises a host material comprising a phase change material and a nano-scaled material distributed within a portion of the host material.
5 more elements
An integrated circuit including a memory cell comprising:
- a first electrode;
- a second electrode;
- a storage material positioned between the first electrode and the second electrode;
- and
- a nanocomposite insulator contacting the storage material, wherein the storage material comprises a phase change material, and the nanocomposite insulator comprises a porous insulator infiltrated with nanoparticles of the same phase change material.
2 more elements
Dependencies are inferred from the claim text.