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US 7,453,074 B2Granted
Ion implanter with ionization chamber electrode design
AssigneeAxcelis Technologies, Inc.
InventorsEdward C. Eisner, William DiVergilio
Life of this patent
Estimating the term…
Abstract
An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
Claims26
An ion implanter comprising:
- a) an ion source including an ionization chamber having an interior region for generating ions for use in creating an ion beam confined to a beam path;
- b) an implantation chamber having an evacuated interior region wherein a workpiece is positioned to intersect the ion beam;
- c) structure for accelerating and shaping the ion beam from the source to move along the beam path between the ion source and the implantation chamber;
- and
- d) an ionization chamber electrode having a front defining an elongated aperture for allowing ions to exit said ionization chamber and accelerate through a region in close proximity to said ionization chamber electrode including a rim having an outwardly facing rim surface spaced from the aperture, a flat border surface immediately adjacent the aperture in a plane closer to the interior region of the ionization chamber than the outwardly facing rim surface;
- and an intermediate transition surface between the border surface and the outwardly facing rim surface.
3 more elements
An ion implanter comprising:
- a) an ion source for generating an ion beam confined to a beam path;
- b) an implantation chamber having an evacuated interior region wherein a workpiece is positioned to intersect the ion beam;
- c) structure for accelerating and shaping the ion beam from the source to move along the beam path between the ion source and the implantation chamber;
- and
- d) an ionization chamber electrode having an elongated aperture for allowing ions within the ionization chamber to exit said ionization chamber and accelerate through a region in close proximity to said ionization chamber electrode;
- e) said electrode having a front defined by a flat border surface immediately adjacent the elongated aperture and a generally planar raised face portion spaced from the elongated aperture and the flat surface immediately adjacent said aperture by a transition boundary.
3 more elements
An ion implanter comprising:
- a) an ion source for generating an ion beam confined to a beam path;
- b) an implantation chamber having an evacuated interior region wherein a workpiece is positioned to intersect the ion beam;
- and
- c) structure for accelerating and shaping the ion beam from the source to move along the beam path between the ion source and the implantation chamber;
- d) said ion source including an ionization chamber and an ionization chamber electrode defining an elongated aperture for allowing ions within said source to exit said source and accelerate through a region in close proximity to said ionization chamber electrode and including a raised rim portion bounding the aperture having an outward face spaced from the aperture above a first planar, immediately adjacent surface bordering the aperture.
2 more elements
An ion source comprising:
- an ionization chamber having an interior region for generating ions;
- and
- an ionization chamber electrode having a front defining an elongated aperture for allowing ions to exit said ionization chamber and accelerate through a region in close proximity to said ionization chamber electrode including a rim having an outwardly facing rim surface spaced from the aperture, a flat border surface immediately adjacent the aperture in a plane closer to the interior region of the ionization chamber than the outwardly facing rim surface;
- and an intermediate transition surface between the bounding surface and the outwardly facing rim surface.
1 more element
An ion source for generating an ion beam, comprising;
- an ionization chamber for generating ions;
- and an ionization chamber electrode for extracting ions from said ionization chamber, said electrode defining an elongated aperture and a raised face portion bounding and spaced from the aperture in a plane spaced from a flat, immediately adjacent surface bordering the aperture in a direction of ion movement away from said ionization chamber, and including raised portions bounding the aperture at opposite ends thereof in a plane intermediate the flat surface bordering the aperture and the raised face portion.
An ion source comprising:
- an ion chamber for generating a controlled concentration of ions;
- and
- an ionization chamber electrode having an elongated aperture for allowing ions within the ionization chamber to exit said ionization chamber and accelerate through a region in close proximity to said ionization chamber electrode;
- said electrode having a front defined by a flat border surface immediately adjacent the elongated aperture and a generally planar raised face portion spaced from the elongated aperture and the flat surface immediately adjacent said aperture by a transition boundary.
1 more element
Dependencies are inferred from the claim text.