Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor

A charged particle beam apparatus provided with function of depositing a film on a sample by an irradiation of a charged particle beam and a supply of deposition gas, comprising:

• a charged particle beam optical system to irradiate focused charged particles;
• a spraying device to spray the deposition gas;
• and
• a control unit to calibrate a deposition rate of the film,
• wherein said control unit controls the condition of the irradiation of the charged particle beam in accordance of a permissible value of depth of a hollow formed on a surface between the film and the sample.

A charged particle beam apparatus provided with function of depositing a film on a sample by an irradiation of a charged particle beam and a supply of deposition gas, comprising:

• an optical system to irradiate focused charged particles;
• a gas nozzle to supply the deposition gas;
• and
• a control unit to control conditions of the irradiation of the charged particle beam,
• wherein said control unit controls the condition of the irradiation of the charged particle beam in accordance of a permissible value of depth of a hollow formed on a surface between the film and the sample.

A charged particle beam apparatus provided with a function to prepare a specimen from a sample by utilizing a charged particle beam comprising:

• a charged particle beam optical system to irradiate a focused charged particle beam on the sample;
• a spraying device to spray a deposition gas;
• a mechanical probe to separate the specimen from the sample;
• and
• a control unit to control conditions of the irradiation of the charged particle beam,
• wherein said control unit estimates a deposition rate from a loop time dependence of the deposition rate of the deposition gas, and displays candidate values of the deposition rate for the selection of operator.