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US 7,453,065 B2Granted
Sensor and image pickup device
AssigneesCanon Kabushiki Kaisha, Tokyo Institute of Technology
InventorsKeishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura
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Abstract
A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
Claims1
An image pickup device comprising:
- a flexible substrate;
- an X-ray sensor comprises a semiconductor layer, and the semiconductor layer comprises an amporphous oxide, arranged on the flexible substrate;
- and
- a field effect transistor for reading a signal from the X-ray sensor, wherein:
- the field effect transistor has an amorphous oxide as an active layer;
- and
- the amorphous oxide comprises one of an oxide having an electron carrier concentration of less than 1018/cm3 and an oxide whose electron mobility tends to increase with increasing electron carrier concentration.
4 more elements
Dependencies are inferred from the claim text.