System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy

A process for heating semiconductor substrates during an ion implantation damage annealing process comprising:

• placing a semiconductor substrate comprising a pattern of coatings in a processing chamber;
• directing a laser beam onto the semiconductor substrate;
• configuring the laser beam to strike the substrate at an angle of incidence of at least 10°;
• configuring the laser beam to strike the substrate so that the laser beam strikes the substrate in a p-polarization plane or near a p-polarization plane;
• wherein the laser beam heats the semiconductor substrate, the semiconductor substrate being heated to a temperature sufficient to cause ion implantation damage annealing that repairs defects;
• and
• wherein the semiconductor substrate has an irregular surface that comprises non-smooth features, and wherein the laser beam is configured to strike the semiconductor substrate so as to take into account the non-smooth features.

An apparatus for heating semiconductor substrates comprising:

• a thermal processing chamber adapted to contain a semiconductor wafer;
• a heated susceptor contained in the thermal processing chamber for heating wafers present in the chamber;
• at least one laser device configured to emit a laser beam onto a semiconductor substrate present within the chamber, the laser device emitting the laser beam so that the laser beam strikes a substrate at an angle of incidence of at least about 40° and in or near a p-polarization plane, and wherein the laser beam is also configured to move relative to a semiconductor substrate contained in the chamber such that the laser beam emitted by the laser device is scanned over a surface of the substrate;
• and
• at least one temperature sensing device for sensing the temperature of a semiconductor substrate contained in the chamber.

An apparatus for heating semiconductor substrates comprising:

• a thermal processing chamber adapted to contain a semiconductor wafer;
• a heated susceptor contained in the thermal processing chamber for heating wafers present in the chamber;
• at least one laser device configured to emit a laser beam onto a semiconductor substrate present within the chamber, the laser device emitting the laser beam so that the laser beam strikes a substrate at an angle of incidence of at least about 40° and in or near a p-polarization plane, and wherein the laser beam is also configured to move relative to a semiconductor substrate contained in the chamber such that the laser beam emitted by the laser device is scanned over a surface of the substrate;
• and
• a sensor for sensing the amount of the laser beam that is reflected off a semiconductor substrate contained in the chamber.

A process for heating semiconductor substrates comprising:

• placing an initial semiconductor substrate into a processing chamber;
• directing a laser beam onto the initial semiconductor substrate, the laser beam striking the substrate at an angle of incidence of from about 60° to about 85° and in or near a p-polarization plane;
• sensing the amount of the laser beam that is reflected off the semiconductor substrate and based upon the amount of sensed reflected light, adjusting the laser beam so as to change power coupling between the semiconductor substrate and the laser beam;
• and
• processing semiconductor wafers in the processing chamber using the adjusted laser beam.