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US 7,452,830 B2Granted
Semiconductor devices and methods for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorsChul-Ho Shin, Tae-Hong Kim
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Abstract
Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
Claims17
A method to manufacture a semiconductor device, comprising:
- selectively forming an oxide layer on only a predetermined portion of a first substrate before loading the first substrate and a second substrate into a boat;
- loading the first and the second substrates alternately in a plurality of slots of the boat, wherein the first substrate is to be provided with an oxynitride layer and the second substrate has a nitride layer;
- and
- forming the oxynitride layer on the first substrate by positioning the boat in a furnace and thermally treating the boat in an oxygen atmosphere.
1 more element
Dependencies are inferred from the claim text.