Plasma CVD method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masaaki Hiroki, Mitsunori Sakama
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Abstract
In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
Claims7
A plasma CVD method characterized in that an output of an RF power supply is gradually or continuously increased to a value which is at the time of forming a film so that a rapid and transitional change in voltage between RF electrodes is suppressed.
A plasma CVD method comprising the steps of:
- generating plasma from a first gas by an RF power;
- and
- supplying a second gas to form a film during generating the first gas plasma so that a rapid and transitional change in voltage between RF electrodes is suppressed,
- wherein said RF power is monotonously increased and said first gas does not form a deposit by itself upon decomposition thereof.
Dependencies are inferred from the claim text.