Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a concave portion in an underlying layer, the underlying layer being a semiconductor substrate or an insulating film deposited above the semiconductor substrate;
• forming a first resist film above the underlying layer where the concave portion is formed;
• subjecting the first resist film to a chemical mechanical polishing to selectively leave the first resist film inside the concave portion, the chemical mechanical polishing being performed by contacting the first resist film formed above the semiconductor substrate with a polishing pad attached to a turntable while dropping a slurry onto the polishing pad to polish the first resist film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, the primary particle diameter of the resin particle in the first slurry being not less than 70% of an opening diameter of the concave portion;
• and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, the primary particle diameter of the resin particle in the second slurry being larger than the opening diameter of the concave portion, and a surfactant having a hydrophilic moiety;
• and
• recessing the first resist film buried in the concave portion to a depth.

A method of manufacturing a semiconductor device comprising:

• forming a hole in an insulating film which is deposited above a semiconductor substrate;
• forming a first resist film above the insulating film where the hole is formed;
• subjecting the first resist film to a chemical mechanical polishing to selectively leave the first resist film inside the hole, the chemical mechanical polishing being performed by contacting the first resist film formed above the semiconductor substrate with a polishing pad attached to a turntable while dropping a slurry onto the polishing pad to polish the first resist film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, the primary particle diameter of the resin particle in the first slurry being not less than 70% of an opening diameter of the concave portion;
• and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, the primary particle diameter of the resin particle in the second slurry being larger than the opening diameter of the concave portion, and a surfactant having a hydrophilic moiety;
• forming a second resist film above the first resist film after chemical mechanical polishing;
• forming an intermediate layer above the second resist film;
• forming a third resist film above the intermediate layer;
• and
• subjecting the third resist film to pattern exposure.