Semiconductor processing method and chemical mechanical polishing methods

A chemical mechanical polishing method, comprising:

• providing a substrate having an organic material to be polished by chemical mechanical polishing;
• and
• chemical mechanical polishing the organic material using a polishing pad downforce on the substrate of less than or equal to 1.75 psi, using an aqueous slurry comprising abrasive particles comprising an individual particle size of less than or equal to 100 nanometers and at a particle concentration of less than or equal to 20% by weight, and at least one of an acid or a surfactant effective to achieve a removal rate of the organic material of at least 500 Angstroms per minute.

A chemical mechanical polishing method, comprising:

• providing a substrate having organic photoresist received over a TiN-comprising layer;
• and
• chemical mechanical polishing the organic photoresist and the TiN-comprising layer using a polishing pad downforce on the substrate of less than or equal to 1.5 psi, using an aqueous slurry of pH of less than or equal to 3.5 comprising abrasive particles comprising an individual particle size of less than or equal to 20 nanometers and at a particle concentration of less than or equal to 5.0% by weight, an acid, and a surfactant effective to achieve a removal rate of the organic photoresist of at least 500 Angstroms per minute and of the TiN-comprising layer of at least 250 Angstroms per minute.

A chemical mechanical polishing method, comprising:

• providing a substrate having an organic material received over a TiN-comprising layer;
• and
• chemical mechanical polishing the organic material and the TiN-comprising layer using a polishing pad downforce on the substrate of less than or equal to 1.75 psi, using an aqueous slurry of pH of less than or equal to 4.0 comprising abrasive particles comprising an individual particle size of less than or equal to 100 nanometers and at a particle concentration of less than or equal to 20% by weight effective to achieve a removal rate of the organic material of at least 500 Angstroms per minute.