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US 7,452,810 B2Granted
Method of forming a barrier layer of a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKyeongmo Koo, Jaihyung Won, Hyeonill Um, Junhyuk Jung, Sangwook Park
Life of this patent
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Abstract
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2) plasma to clean the surface of the silicon wafer.
Claims22
A method of forming a barrier layer of a semiconductor device, comprising:
- forming a region heavily doped with p-type impurities on a semiconductor substrate, the heavily doped region being formed employing BF2+ ions;
- subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with a RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
- evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600° C.;
- and
- depositing a refractory metal layer on the surface of the semiconductor substrate.
2 more elements
A method of forming a barrier layer of a semiconductor device, comprising:
- forming a heavily doped region on a semiconductor substrate, the heavily doped region including p-type impurities;
- depositing an insulating layer over the semiconductor substrate;
- forming a contact hole through the insulating layer to expose the heavily doped region;
- subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with a RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
- evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600° C.;
- depositing a refractory metal layer on the surface of the semiconductor substrate;
- subjecting a surface of the refractory metal layer to a second hydrogen plasma containing at least one inert gas while biasing the second hydrogen plasma with the RF bias power to direct the second hydrogen plasma to the surface of the refractory metal layer to remove impurities;
- subjecting the refractory metal layer to a nitridation atmosphere to form a first refractory metal nitride layer on a surface portion of the refractory metal layer;
- and
- forming a second refractory metal nitride layer on the first refractory metal nitride layer employing a chemical vapor deposition process or a plasma enhanced chemical vapor deposition process.
7 more elements
A method of forming a barrier layer of a semiconductor device, comprising:
- subjecting a surface of a semiconductor substrate to a hydrogen plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen plasma to the surface of the semiconductor substrate, the semiconductor substrate including dopant impurities;
- evaporating the dopant impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600° C.;
- depositing a refractory metal layer on the surface of the semiconductor substrate, the depositing of the refractory metal layer including employing a chemical vapor deposition process;
- subjecting the refractory metal layer to a nitridation atmosphere to form a first refractory metal nitride layer on a surface portion of the refractory metal layer;
- and
- forming a second refractory metal nitride layer on the first refractory metal nitride layer employing a chemical vapor deposition process or a plasma enhanced chemical vapor deposition process.
3 more elements
A method of forming a barrier layer of a semiconductor device, comprising:
- forming a heavily doped region on a semiconductor substrate, the heavily doped region including p-type impurities;
- reducing a surface concentration of the p-type impurities in the heavily doped region by subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with an RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
- evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600° C.;
- and
- depositing a refractory metal layer on the surface of the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.