Back to results
US 7,452,805 B2Granted
Aluminum based conductor for via fill and interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsiung Wang, Chien-Chao Huang, Chenming Hu, Horng-Huei Tseng
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a dielectric layer having a opening form therein having a cross-sectional area of less than 1 μm2 and a PVD aluminum base conductor filled in the opening.
Claims23
A method of making a semiconductor device comprising;
- providing a first dielectric layer having a plurality of openings formed therethrough;
- forming a plurality of first plug portions, wherein a respective first plug portion is formed in each one of the openings in the first dielectric layer, said step of forming a plurality of first plug portions comprising depositing a first metal comprising aluminum in each of the openings in the first dielectric layer and wherein the first metal has a first grain size;
- forming a first interconnect portion comprising depositing a second metal comprising aluminum over each of the first plug portions, and wherein the second metal has a second grain size, and wherein the first grain size is less than the second grain size.
A method of making a semiconductor device comprising;
- providing a first dielectric layer having a plurality of openings formed therethrough;
- forming a plurality of first plug portions, wherein a respective first plug portion is formed in each one of the openings in the first dielectric layer, said step of forming a plurality of first plug portions comprising depositing a first metal comprising aluminum in each of the openings in the first dielectric layer and wherein the first metal has a first grain size;
- forming a first interconnect portion comprising depositing a second metal comprising aluminum over each of the first plug portions, and wherein the second metal has a second grain size, and wherein the first grain size is less than the second grain size;
- forming a second dielectric layer over the first dielectric layer and the first interconnect portion, the first dielectric layer having a plurality of openings formed therein, each opening in the second dielectric layer being vertically spaced a distance from a respective first plug portion and not vertically aligned with a respective first plug portion;
- forming a second plug portion in each of the openings in the second dielectric layer, said step of forming a second plug portion comprising depositing a first metal comprising aluminum having a first grain size;
- forming a second interconnect portion comprising depositing a second metal comprising aluminum having a second grain size over the second plug portion and wherein the first grain size is less than the second grain size.
3 more elements
A semiconductor device comprising;
- a first dielectric layer having a plurality of openings formed therethrough;
- a plurality of first plug portions, wherein a respective plug portion is in each one of the openings in the first dielectric layer, said plurality of first plug portions comprising a first metal comprising aluminum in each of the openings in the first dielectric layer and wherein the first metal has a first grain size;
- a first interconnect portion comprising a second metal comprising aluminum over each of the first plug portions, and wherein the second metal has a second grain size, and wherein the first grain size is less than the second grain size.
Dependencies are inferred from the claim text.